Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite

In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive with large current switching ratio, the concentration of QDs in PMMA matrix was optimized. It found that QD 1 wt%, device exhibited high ratio ~104 retention time over 104 s, owing efficient charge trapping de-trapping during set reset processes, respectively. addition, investigated operational stability by carrying out cyclic endurance test it showed behavior up 400 cycles. Furthermore, analyzing conduction device, have deduced possible mechanisms for degradation long Specifically, observed dominant mechanism changed from trap-free space charge-limited trap conduction, indicating creation additional states repeated operation, disturbing operation.